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| DATA SHEET CS55BZ CS55DZ SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed for applications requiring extremely low gate sensitivity. MAXIMUM RATINGS (TA=25C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=60oC) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10s) Average Gate Power Dissipation Peak Gate Current (tp=10s) Peak Gate Voltage (tp=10s) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance VDRM,VRRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM Tstg TJ JA JC CS55BZ 200 0.8 10 0.24 2.0 0.1 1.0 8.0 -40 to +125 -40 to +125 200 100 CS55DZ 400 UNITS V A A A2s W W A V C C C/W C/W ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL IDRM,IRRM IDRM,IRRM IGT IH VGT VTM dv/dt TEST CONDITIONS Rated VDRM,VRRM, RGK=1K Rated VDRM,VRRM, RGK=1K, TC=125C VD=12V RGK=1K VD=12V ITM=1.0A VD=.67 x VDRM, RGK=1K, TC=125C 25 100 20 5.00 0.8 1.70 MIN TYP MAX 1.00 A A mA V V V/s UNITS A (SEE REVERSE SIDE) R1 CS55BZ / CS55DZ SILICON CONTROLLED RECTIFIER RMS ON-STATE CURRENT vs. CASE TEMPERATURE 1 IT (RMS), RMS ON-STATE CURRENT (A) 2 MAXIMUM ON-STATE CHARACTERISTICS ITM, ON-STATE CURRENT (A) 0.8 1.5 0.6 1 0.4 TC=125C 0.5 TC=25C 0.2 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 0 0 0.5 1 1.5 2 2.5 VTM, ON-STATE VOLTAGE (V) TO-92 PACKAGE - MECHANICAL OUTLINE A B 123 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03 2.67 0.015 0.38 TO-92 (REV: R1) 1) Anode 2) Gate 3) Cathode C D E F G H SYMBOL A (DIA) B C D E F G H I Lead Code: I R1 |
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